Nano-Scale Patterned Magnetic Tunnel Junction and Its Device Applications
نویسندگان
چکیده
Nano-scale patterned techniques, DCpulsed-current-driven magnetization switching and spin-dependent transport properties of magnetic tunnel junctions (MTJs) are presented in this paper. The experiments show that the spin transfer torque (STT) plays a main switching role in the magnetization current switching and the current-induced circular magnetic field plays an assisted-switching role in the nanoring-MTJs. Such nano-scale MTJs can be used to develop the STT-MRAM, nano-oscillator, current-driven magnetic logic, spin torque diode and double barrier MTJ spin-transistor etc. We also summarize recent research on spin-dependent transport properties in MgO(001)-based MTJs using first-principles calculations, including tunneling mechanism, interfacial resonance states in single barrier Fe/MgO/Fe MTJs, and quantum-well resonance in double barrier MTJs.
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